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Eudyna GaN-HEMT 10W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Power : 41.0dBm (typ.) @ P3dB High Efficiency: 60%(typ.) @ P3dB Linear Gain : 15dB(typ.) @ f=3500MHz Broad Frequency Range : 800 to 3700MHz Proven Reliability
EGN010MK
High Voltage - High Power GaN-HEMT
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage.
ABSOLUTE MAXIMUM RATINGS Item Symbol
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch
Condition
Tc=25oC
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item Symbol
VDS IGF IGR Tch
DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature
r P
im l e
Condition
RG=50 RG=50 Vp VGDO P3dB d GL Rth
a in
Rating Limit
50 <2.0 >-0.5 200
120 -5 40.9 -65 to +175 250
y r
Unit
V V W oC oC
Unit
V mA mA oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min.
Pinch-Off Voltage Gate-Drain Breakdown Voltage 3dB Gain Compression Power Drain Efficiency Linear Gain Thermal Resistance VDS=50V IDS=2.6mA IGS=- 1.3 mA VDS=50V IDS(DC)=100mA f=3.5GHz Channel to Case 14.0 -1.0 40.0
Limit Typ. Max.
-2.0 -350 41.0 60 15.0 4.5 -3.5 5.5
Unit
V V dBm % dB
oC/W
Edition 1.0 June 2005
1
EGN010MK
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency VDS=50V IDS(DC)=100mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=100mA f=3.5GHz
42 40 38
42 40 38 Output Power [dBm] 36 34 32 30 28 26 24 22 Output Power
100 90 80 Drain Efficiency [%]
300
Pout [dBm]
36 34 32 30 28 26
70 60
24 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 Frequency [GHz]
Pin=14dBm Pin=26dBm
Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=100mA f=2.17GHz
42 40 38 Output Power [dBm] 36 34 32 30 28 26 24 22
Total Power Dissipation [W]
Output Power
re P
Pin=30dBm
Pin=18dBm
im l
Pin=22dBm
a in
45 40 35 30 25 20 15 10 5 0 0
y r
50 40 Drain Effi. 30 20 10 0
10 12 14 16 18 20 22 24 26 28 30 32 Input Power [dBm]
Power Derating Curve
100 90 80 Drain Efficiency [%] 70 60 50 40
Drain Effi.
30 20 10 0
10 12 14 16 18 20 22 24 26 28 30 Input Power [dBm]
100
200
Case Temperature [ ]
2
EGN010MK
High Voltage - High Power GaN-HEMT
S-Parameters @VDS=50V IDS=100mA f=0.5 to 5.5 GHz Zl = Zs = 50 ohm Marker : 3.5GHz
+50j +25j
10 25
+100j
+10j
50
+250j
0
3.5GHz
3.5GHz
-10j
-250j
-25j -50j
-100j
r P
+90
3.5GHz
im l e
S22
S11
180 20 Scale for |S21|
3.5GHz
0.2 Scale for |S 12| -90
Freq [GHz] 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 S12 4.8 S21 4.9 5.0 5.1 5.2 5.3 5.4 5.5
S11 MAG 0.867 0.853 0.848 0.844 0.843 0.839 0.838 0.839 0.836 0.833 0.830 0.826 0.822 0.814 0.805 0.798 0.780 0.767 0.751 0.730 0.703 0.673 0.640 0.600 0.551 0.499 0.441 0.382 0.328 0.291 0.288 0.316 0.371 0.433 0.497 0.556 0.604 0.651 0.688 0.718 0.745 0.766 0.787 0.803 0.816 0.825 0.834 0.841 0.845 0.853 0.855
a in
ANG -127.5 -137.8 -146.1 -153.2 -159.3 -164.4 -169.0 -173.5 -177.2 179.2 175.9 172.5 169.5 166.5 163.5 160.6 157.3 154.0 150.4 146.6 142.0 136.9 131.2 124.4 116.5 106.5 94.6 79.6 59.9 34.3 5.2 -21.9 -43.9 -61.6 -75.6 -87.3 -97.0 -105.5 -112.4 -119.0 -124.4 -129.5 -134.1 -138.2 -142.1 -145.9 -149.4 -152.8 -156.3 -159.9 -162.9
S21 MAG ANG 13.500 88.8 11.482 79.3 9.889 70.8 8.679 63.1 7.627 55.9 6.803 49.4 6.100 43.4 5.520 37.3 5.030 31.8 4.592 26.4 4.235 21.8 3.909 17.0 3.637 12.5 3.425 8.6 3.226 4.4 3.085 0.2 2.941 -3.6 2.848 -7.8 2.773 -12.0 2.707 -16.6 2.664 -21.0 2.639 -25.9 2.613 -31.0 2.611 -36.9 2.614 -42.9 2.613 -49.5 2.608 -56.9 2.594 -64.3 2.551 -72.4 2.513 -81.1 2.429 -89.7 2.332 -98.4 2.217 -107.2 2.069 -115.7 1.934 -123.7 1.778 -131.7 1.652 -138.6 1.518 -145.6 1.399 -151.9 1.291 -157.5 1.194 -163.4 1.106 -168.5 1.037 -173.9 0.975 -179.3 0.920 176.6 0.877 171.3 0.829 166.6 0.798 161.5 0.768 155.8 0.741 150.3 0.721 144.6
y r
S12 MAG 0.011 0.011 0.011 0.011 0.010 0.010 0.009 0.009 0.008 0.007 0.007 0.007 0.006 0.006 0.006 0.006 0.005 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.007 0.008 0.008 0.009 0.010 0.011 0.012 0.012 0.012 0.013 0.012 0.013 0.012 0.012 0.011 0.011 0.010 0.010 0.010 0.010 0.009 0.009 0.010 0.009 0.011 0.011 0.013
ANG 8.7 1.3 -4.9 -10.4 -16.2 -19.8 -23.1 -25.7 -27.4 -27.7 -29.7 -29.8 -30.1 -30.1 -28.7 -26.9 -28.1 -23.0 -18.6 -16.9 -13.5 -10.1 -7.7 -7.5 -9.9 -10.2 -11.8 -18.0 -24.7 -33.2 -41.5 -52.5 -62.0 -69.4 -79.5 -87.3 -95.0 -105.1 -111.3 -117.8 -122.8 -129.7 -132.9 -136.2 -137.9 -139.4 -140.0 -137.1 -140.6 -140.3 -143.7
S22 MAG 0.763 0.758 0.758 0.762 0.767 0.771 0.777 0.780 0.789 0.796 0.800 0.802 0.807 0.816 0.817 0.826 0.828 0.839 0.851 0.857 0.863 0.869 0.874 0.881 0.891 0.893 0.900 0.909 0.909 0.916 0.922 0.923 0.924 0.919 0.921 0.916 0.910 0.909 0.899 0.895 0.886 0.876 0.869 0.857 0.848 0.838 0.821 0.810 0.793 0.777 0.765
ANG -54.8 -62.8 -70.5 -77.5 -84.4 -90.5 -96.5 -102.0 -107.0 -112.1 -116.2 -120.0 -123.3 -126.5 -129.8 -132.4 -134.8 -136.9 -138.8 -140.9 -142.5 -144.5 -145.7 -147.3 -149.0 -150.6 -151.9 -153.9 -155.6 -157.1 -158.9 -160.7 -162.8 -164.8 -166.7 -169.1 -170.8 -173.0 -175.0 -176.9 -179.5 178.7 176.3 174.3 172.2 169.5 167.2 164.9 162.0 159.7 156.7
3

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